Publications in 1995

references

95/01 M. Breeman, G.T. Barkema, and D.O. Boerma
Binding energies and stability of Cu-adatom clusters on Cu(100) and Cu(111)
Surf. Sci. 323 (1995) 71-80

95/02 E.H. du Marchie van Voorthuysen
Coherent Bremstrahlung and the quantum theory of measurement
J. Phys. I (France) 5 (1995) 245-262

95/03 Z.N. Liang and L. Niesen
Evidence for the formation of tellurium-hydrogen complexes in crystalline silicon
Phys. Rev. B51 (1995) 11120-11123

95/04 M.J.W. Greuter, L. Niesen, A. van Veen, R.A. Hakvoort, M. Verwerft, J.Th.M. de Hosson, A.J.M. Berntsen, and W.G. Sloof
Kr incorporation in sputtered amorphous Si layers
J. Appl. Phys. 77 (1995) 3467-3478

95/05 D.P. van der Werf, H. van Leuken, and R.A. de Groot
Electric-field-gradient calculations on cadmium in cadmium-helium vacancy clusters in tungsten
Phys. Rev. B52 (1995) 3909-3916

95/06 G. Dorenbos, D.O. Boerma, T.M. Buck, and G.H. Wheatley
Au overlayer structures on a Ni(110) surface
Phys. Rev. B51 (1995) 4485-4496

95/07 H.A. van der Vegt, M. Breeman, S. Ferrer, V.H. Etgens, X. Torrelles, P. Fajardo, and E. Vlieg
Indium-induced lowering of the Schwoebel barrier in the homoepitaxial growth of Cu(100)
Phys. Rev. B51 (1995) 14806-14809

95/08 Z.N. Liang, P.J.H. Denteneer, and L. Niesen
Microscopic structures of Sb-H, Te-H, and Sn-H complexes in silicon
Phys. Rev. B52 (1995) 8864-8876

95/09 D.O. Boerma
Spectroscopic analysis of engineered surfaces, interfaces and thin layers
in: Materials and Processes for Surface and Interface Engineering, ed. Y. Pauleau, Nato ASI Series E (Kluwer Academic Publ., Dordrecht, 1995) 407-452

95/10 O. Biham, G.T. Barkema, and M. Breeman
Rate equation for the growth of Cu islands on Cu(001)
Surf. Sci. 324 (1995) 47-54

95/11 I. Penninga, H. de Waard, B.M. Moskowitz, D.A. Bazylinski, and R.B. Frankel
Remanence measurements on individual magnetotactic bacteria using a pulsed magnetic field
J. Magn. Magn. Mat. 149 (1995) 279-286

95/12 F.C. Voogt, T. Hibma, G.L. Zhang, M. Hoefman, and L. Niesen
Growth and characterization of non-stoichiometric magnetic Fe3-δO4 thin films
Surf. Sci. 331-333 (1995) 1508-1514

95/13 P.J.C. King, M.B.H. Breese, P.J.M. Smulders, P.R.Wilshaw, and G.W. Grime
Observation of a blocking to channeling transition for MeV protons at stacking faults in silicon.
Phys. Rev. Lett. 74 (1995) 411-414

95/14 M.B.H. Breese, P.J.C. King, P.J.M. Smulders, and G.W. Grime
Dechanneling of MeV protons by 60 degree dislocations
Phys. Rev. B51 (1995) 2742-2750

95/15 P.J.C. King, M.B.H. Breese, P.R.Wilshaw, P.J.M. Smulders, and G.W.Grime
Transmission ion channeling images of crystal defects
Nucl. Instr. and Meth. in Phys. Res. B99 (1995) 419-422

95/16 P.J.C. King, M.B.H. Breese, P.J.M. Smulders, A.J. Wilkingson, G.R. Booker, E.H.C. Parker, and G.W. Grime
Evidence from ion channeling images for the elastic relaxation of a Si0.85Ge0.15 layer grown on a patterned Si substrate
Appl. Phys. Lett. 67 (1995) 3566-3568

95/17 E.H. du Marchie van Voorthuysen
Een interactie-vrije meting
Ned. Tijdschrift voor Natuurkunde (18) (1995) 311-311

95/18 Z.N. Liang, L. Niesen, C. Haas, and P.J.H. Denteneer
Donor-two-hydrogen complexes in n-type silicon
Proceedings of the 22nd Int. Conf. on the Physics of Semiconductors, ed. D.J. Lockwood (World Scientific, Singapore, 1995) 2211-2214

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